K. Isoird : rechercher sur Z-Library

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1

Thick boron doped diamond single crystals for high power electronics

Achard, J., Silva, F., Issaoui, R., Brinza, O., Tallaire, A., Schneider, H., Isoird, K., Ding, H., Koné, S., Pinault, M.A., Jomard, F., Gicquel, A.

Journal:

Diamond and Related Materials

Année:

2011

Langue:

english

Fichier:

PDF, 1.51 MB

english, 2011

2

[IEEE 2007 European Conference on Power Electronics and Applications - Aalborg, Denmark (2007.09.2-2007.09.5)] 2007 European Conference on Power Electronics and Applications - Deep trench MOSFET structures study for a 1200 Volts application

Theolier, L., Isoird, K., Morancho, F., Roig, J., Mahfoz-Kotb, H., Brunet, M., Dubreuil, P.

Année:

2007

Langue:

english

Fichier:

PDF, 444 KB

english, 2007

3

[IEEE IC's (ISPSD) - Barcelona, Spain (2009.06.14-2009.06.18)] 2009 21st International Symposium on Power Semiconductor Devices & IC's - A new junction termination technique: The Deep Trench Termination (DT2)

Theolier, L., Mahfoz-Kotb, H., Isoird, K., Morancho, F.

Année:

2009

Langue:

english

Fichier:

PDF, 532 KB

english, 2009

4

Simulation and design of junction termination structures for diamond Schottky diodes

Thion, F., Isoird, K., Planson, D., Locatelli, M.-L., Ding, H.

Journal:

Diamond and Related Materials

Année:

2011

Langue:

english

Fichier:

PDF, 911 KB

english, 2011

5

[IEEE IC's (ISPSD) - Orlando, FL, USA (2008.05.18-2008.05.22)] 2008 20th International Symposium on Power Semiconductor Devices and IC's - Feasibility study of a junction termination using deep trench isolation technique for the realization of DT-SJMOSFETs

Mahfoz-Kotb, H., Theolier, L., Morancho, F., Isoird, K., Dubreuil, P., Do Conto, T.

Année:

2008

Langue:

english

Fichier:

PDF, 329 KB

english, 2008

6

Filling of very deep, wide trenches by BenzoCycloButene polymer

Hicham Eldin Mahfoz Kotb, K. Isoird, F. Morancho, L. Théolier, T. Do Conto

Journal:

Microsystem Technologies

Année:

2009

Langue:

english

Fichier:

PDF, 403 KB

english, 2009

7

CVD diamond Schottky barrier diode, carrying out and characterization

Koné, S., Civrac, G., Schneider, H., Isoird, K., Issaoui, R., Achard, J., Gicquel, A.

Journal:

Diamond and Related Materials

Année:

2010

Langue:

english

Fichier:

PDF, 654 KB

english, 2010

8

Basic parameters and models in simulation of CVD diamond devices

Ding, H., Isoird, K., Schneider, H., Kone, S., Civrac, G.

Journal:

Diamond and Related Materials

Année:

2010

Langue:

english

Fichier:

PDF, 457 KB

english, 2010

9

An assessment of contact metallization for high power and high temperature diamond Schottky devices

Koné, S., Schneider, H., Isoird, K., Thion, F., Achard, J., Issaoui, R., Msolli, S., Alexis, J.

Journal:

Diamond and Related Materials

Année:

2012

Langue:

english

Fichier:

PDF, 1.01 MB

english, 2012

10

Analysis of an ESD failure mechanism on a SiC MESFET

Phulpin, T., Trémouilles, D., Isoird, K., Tournier, D., Godignon, P., Austin, P.

Journal:

Microelectronics Reliability

Année:

2014

Langue:

english

Fichier:

PDF, 2.36 MB

english, 2014

11

High termination efficiency using polyimide trench for high voltage diamond Schottky diode

Arbess, Houssam, Isoird, Karine, Zerarka, Moustafa, Schneider, Henri, Locatelli, Marie-Laure, Planson, Dominique

Journal:

Diamond and Related Materials

Année:

2015

Langue:

english

Fichier:

PDF, 1.32 MB

english, 2015

12

Switching performance of 65 V vertical N-channel FLYMOSFETs

L. Théolier, K. Isoird, H. Tranduc, F. Morancho, J. Roig, Y. Weber, E.N. Stefanov, J.-M. Reynès

Journal:

Microelectronics Journal

Année:

2008

Langue:

english

Fichier:

PDF, 795 KB

english, 2008

13

P–N Junction creation in 6H-SiC by aluminum implantation

L Ottaviani, M.L Locatelli, D Planson, K Isoird, J.P Chante, E Morvan, P Godignon

Journal:

Materials Science and Engineering: B

Année:

1999

Langue:

english

Fichier:

PDF, 188 KB

english, 1999

14

Study of 6H–SiC high voltage bipolar diodes under reverse biases

K. Isoird, M. Lazar, L. Ottaviani, M.L. Locatelli, C. Raynaud, D. Planson, J.P. Chante

Journal:

Applied Surface Science

Année:

2001

Langue:

english

Fichier:

PDF, 485 KB

english, 2001

15

Experimental validation of the 'floating islands' concept: 95v breakdown voltage vertical FLIdiode

Alves, S., Morancho, F., Reynes, J.-M., Margheritta, J., Deram, I., Isoird, K., Beydoun, B.

Journal:

IEE Proceedings - Circuits Devices and Systems

Année:

2006

Langue:

english

Fichier:

PDF, 551 KB

english, 2006

16

Barrier height determination of SiC Schottky diodes by capacitance and current–voltage measurements

Raynaud, C., Isoird, K., Lazar, M., Johnson, C. M., Wright, N.

Journal:

Journal of Applied Physics

Année:

2002

Langue:

english

Fichier:

PDF, 377 KB

english, 2002

17

[IEEE 2009 Spanish Conference on Electron Devices (CDE) - Santiago de Compostela, Spain (2009.02.11-2009.02.13)] 2009 Spanish Conference on Electron Devices - Analysis of the C-V characteristic in SiO2/GaN MOS capacitors

Cortes, I, Al-Alam, E, Besland, MP, Regreny, P, Morancho, F, Cazarre, A, Cordier, Y, Goullet, A, Isoird, K

Année:

2009

Langue:

english

Fichier:

PDF, 3.60 MB

english, 2009

18

Analysis and Optimization of a Thyristor Structure Using Backside Schottky Contacts Suited for the High Temperature

Toulon, Gaetan, Bourennane, Abdelhakim, Isoird, Karine

Journal:

IEEE Transactions on Electron Devices

Année:

2013

Langue:

english

Fichier:

PDF, 2.41 MB

english, 2013

19

[IEEE 2013 25th International Conference on Microelectronics (ICM) - Beirut, Lebanon (2013.12.15-2013.12.18)] 2013 25th International Conference on Microelectronics (ICM) - Field plate termination for high voltage diamond Schottky diode

Arbess, Houssam, Isoird, Karine

Année:

2013

Langue:

english

Fichier:

PDF, 1.64 MB

english, 2013

20

[IEEE 2004 International Conference on Cyberworlds - Tokyo, Japan (18-20 Nov. 2004)] 2004 International Conference on Cyberworlds - A Framework to Improve Learning by Analyzing the Students' Browsing during the Learning Phase

Sala, M., Pompidor, P., Herin, D., Isoird, G.

Année:

2004

Langue:

english

Fichier:

PDF, 138 KB

english, 2004

21

[IEEE CAS 2001 International Semiconductor Conference - Sinaia, Romania (9-13 Oct. 2001)] 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547) - 4H-SiC bipolar power diodes realized by ion implantation

Lazar, M., Planson, D., Isoird, K., Locatelli, M.L., Raynaud, C., Chante, J.P.

Année:

2001

Langue:

english

Fichier:

PDF, 335 KB

english, 2001

22

A New Junction Termination Using a Deep Trench Filled With BenzoCycloButene

Theolier, L., Mahfoz-Kotb, H., Isoird, K., Morancho, F., Assie-Souleille, S., Mauran, N.

Journal:

IEEE Electron Device Letters

Année:

2009

Langue:

english

Fichier:

PDF, 420 KB

english, 2009

23

[IEEE 2005 IEEE 11th European Conference on Power Electronics and Applications - Dresden, Germany ()] 2005 European Conference on Power Electronics and Applications - Technological realization of low on-resistance FLYMOS/spl trade/ transistors dedicated to automotive applications

Alves, S., Morancho, F., Reynes, J.-M., Margheritta, J., Deram, I., Isoird, K., Tranduc, H.

Année:

2005

Langue:

english

Fichier:

PDF, 4.48 MB

english, 2005

24

[IEEE 2013 15th European Conference on Power Electronics and Applications (EPE) - Lille, France (2013.09.2-2013.09.6)] 2013 15th European Conference on Power Electronics and Applications (EPE) - New termination architecture for 1700 V diamond Schottky diode

Arbess, Houssam, Isoird, Karine, Hamady, Saleem

Année:

2013

Langue:

english

Fichier:

PDF, 880 KB

english, 2013

25

[IEEE Proceedings. 15th International Workshop on Database and Expert Systems Applications, 2004. - Zaragoza, Spain (2004.09.3-2004.09.3)] Proceedings. 15th International Workshop on Database and Expert Systems Applications, 2004. - A proposed architecture to index courses on Web site and analyse the student follow up

Sala, M., Pompidor, P., Herin, D., Isoird, G.

Année:

2004

Fichier:

PDF, 3.24 MB

2004

26

[IEEE 2007 European Conference on Power Electronics and Applications - Aalborg, Denmark (2007.09.2-2007.09.5)] 2007 European Conference on Power Electronics and Applications - Performance of 3D capacitors integrated on silicon for DC-DC converter applications

Benazzi, A., Brunet, M., Dubreuil, P., Mauran, N., Bary, L., Laur, J-P., Sanchez, J-L., Isoird, K.

Année:

2007

Langue:

english

Fichier:

PDF, 330 KB

english, 2007

27

[IEEE IEEE/WIC/ACM International Conference on Web Intelligence (WI'04) - Beijing, China (20-24 Sept. 2004)] IEEE/WIC/ACM International Conference on Web Intelligence (WI'04) - Help a Teacher in the Conception of a Course by using Semantic Information

Sala, M., Pompidor, P., Herin, D., Isoird, G.

Année:

2004

Langue:

english

Fichier:

PDF, 130 KB

english, 2004

28

A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects

Lazar, Mihaï, Raynaud, Christophe, Planson, Dominique, Locatelli, Marie Laure, Isoird, K., Ottaviani, Laurent, Chante, Jean-Pierre, Nipoti, Roberta, Poggi, Antonella, Cardinali, G.C.

Journal:

Materials Science Forum

Année:

2002

Fichier:

PDF, 345 KB

2002

29

Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation

Isoird, K., Ottaviani, Laurent, Locatelli, Marie Laure, Planson, Dominique, Raynaud, Christophe, Bevilacqua, Pascal, Chante, Jean-Pierre

Journal:

Materials Science Forum

Année:

2000

Langue:

english

Fichier:

PDF, 362 KB

english, 2000

30

Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization

Isoird, K., Lazar, Mihaï, Locatelli, Marie Laure, Raynaud, Christophe, Planson, Dominique, Chante, Jean-Pierre

Journal:

Materials Science Forum

Année:

2002

Fichier:

PDF, 351 KB

2002

31

Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process

Al Alam, Elias, Cortés, Ignasi, Begou, T., Goullet, Antoine, Morancho, Frederique, Cazarré, Alain, Regreny, P., Brault, J., Cordier, Yvon, Besland, Marie Paule, Isoird, K.

Journal:

Materials Science Forum

Année:

2012

Langue:

english

Fichier:

PDF, 402 KB

english, 2012

32

[IEEE 2010 27th International Conference on Microelectronics Proceedings - Nis, Serbia (2010.05.16-2010.05.19)] 2010 27th International Conference on Microelectronics Proceedings - Comparison of GaN-based MOS structures with different interfacial layer treatments

Alam, E. Al, Cortes, I., Besland, M. P., Regreny, P., Goullet, A., Morancho, F., Cazarre, A., Cordier, Y., Isoird, K., Olivie, F.

Année:

2010

Langue:

english

Fichier:

PDF, 978 KB

english, 2010

33

Failure analysis of ESD-stressed SiC MESFET

Phulpin, T., Trémouilles, D., Isoird, K., Tournier, D., Godignon, P., Austin, P.

Journal:

Microelectronics Reliability

Année:

2015

Langue:

english

Fichier:

PDF, 2.24 MB

english, 2015

34

[IEEE 2014 International Semiconductor Conference (CAS) - Sinaia, Romania (2014.10.13-2014.10.15)] 2014 International Semiconductor Conference (CAS) - Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects

Planson, D., Brosselard, P., Isoird, K., Lazar, M., Phung, L. V., Raynaud, C., Tournier, D.

Année:

2014

Langue:

english

Fichier:

PDF, 2.19 MB

english, 2014

35

Original Field Plate to Decrease the Maximum Electric Field Peak for High-Voltage Diamond Schottky Diode

Arbess, Houssam, Isoird, Karine, Hamady, Saleem, Zerarka, Moustafa, Planson, Dominique

Journal:

IEEE Transactions on Electron Devices

Année:

2015

Langue:

english

Fichier:

PDF, 2.44 MB

english, 2015

36

[IEEE 2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - Reno, NV, USA (2015.9.27-2015.10.2)] 2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) - An electrostatic-discharge-protection solution for Silicon-Carbide MESFET

Phulpin, T., Tremouilles, D., Isoird, K., Tournier, D, Godignon, P., Austin, P.

Année:

2015

Langue:

english

Fichier:

PDF, 4.31 MB

english, 2015

37

[IEEE 2015 MIXDES - 22nd International Conference "Mixed Design of Integrated Circuits & Systems" - Torun, Poland (2015.6.25-2015.6.27)] 2015 22nd International Conference Mixed Design of Integrated Circuits & Systems (MIXDES) - An improved junction termination design using deep trenches for superjunction power devices

Noblecourt, Sylvain, Morancho, Frederic, Isoird, Karine, Austin, Patrick, Tasselli, Josiane

Année:

2015

Langue:

english

Fichier:

PDF, 1.03 MB

english, 2015

38

[IEEE CAS '99 Proceedings. 1999 International Semiconductor Conference - Sinaia, Romania (5-9 Oct. 1999)] CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) - Comparison of static, switching and thermal behavior between a 1500 V silicon and silicon carbide bipolar diodes

Nallet, F., Planson, D., Isoird, K., Locatelli, M.L., Chante, J.P.

Année:

1999

Langue:

english

Fichier:

PDF, 383 KB

english, 1999

39

[IEEE 1998 International Semiconductor Conference. CAS'98 Proceedings - Sinaia, Romania (6-10 Oct. 1998)] 1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) - Silicon carbide power devices

Chante, J.P., Locatelli, M.L., Planson, D., Ottaviani, L., Morvan, E., Isoird, K., Nallet, F.

Année:

1998

Langue:

english

Fichier:

PDF, 1019 KB

english, 1998

40

[IEEE 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe) - Karlsruhe, Germany (2016.9.5-2016.9.9)] 2016 18th European Conference on Power Electronics and Applications (EPE'16 ECCE Europe) - Dynamic of power-GaN-HEMT electrical parameters: Why DC characterization might be misleading

Marcault, E., Tremouilles, D., Isoird, K., Morancho, F., Gavelle, M.

Année:

2016

Langue:

english

Fichier:

PDF, 1.21 MB

english, 2016

41

Experimental validation of the “FLoating Island” concept: realization of low on-resistance FLYMOS™ transistors

Alves, S., Morancho, F., Reynès, J-M., Margheritta, J., Deram, I., Isoird, K.

Journal:

The European Physical Journal Applied Physics

Année:

2005

Langue:

english

Fichier:

PDF, 1.52 MB

english, 2005

42

Diamond Schottky diodes operating at 473 K

Monflier, Richard, Isoird, Karine, Cazarre, Alain, Tasselli, Josiane, Servel, Alexandra, Achard, Jocelyn, Eon, David, Valdivia Birnbaum, Maria José

Journal:

Année:

2017

Langue:

english

Fichier:

PDF, 2.65 MB

english, 2017

43

Analysis study of sensitive volume and triggering criteria of single-event burnout in super-junction metal-oxide semiconductor field-effect transistors

Tasselli, Josiane, Arbess, Houssam, Isoird, Karine, Morancho, Frédéric, Austin, Patrick, Zerarka, Moustafa

Journal:

IET Circuits Devices & Systems

Année:

2014

Langue:

english

Fichier:

PDF, 765 KB

english, 2014

44

Contribution to Silicon-Carbide-MESFET ESD robustness analysis

Phulpin, T., Isoird, K., Tremouilles, D., Austin, P., Perpinya, X., Leon, J., Vellvehi, M.

Journal:

IEEE Transactions on Device and Materials Reliability

Année:

2018

Langue:

english

Fichier:

PDF, 3.51 MB

english, 2018

45

[IEEE 2019 International Conference on Information and Communication Technology Convergence (ICTC) - Jeju Island, Korea (South) (2019.10.16-2019.10.18)] 2019 International Conference on Information and Communication Technology Convergence (ICTC) - Use Case Specification for Upper-limb Rehabilitation with FES and Exoskeleton

Kim, Woojin, Raton, Javier Finez, Isoird, Carlos Fernandez, Marinelarena, Iker, Alonso, Miguel Angel Aldudo, Shin, Myung Jun, Park, Tae Sung, Jo, Junghee, Joe, Hyunwoo, Kim, HyunSuk, Yoon, Daesub, Jun

Année:

2019

Fichier:

PDF, 2.93 MB

2019

46

[IEEE 2019 IEEE 13th International Conference on Power Electronics and Drive Systems (PEDS) - Toulouse, France (2019.7.9-2019.7.12)] 2019 IEEE 13th International Conference on Power Electronics and Drive Systems (PEDS) - Ohmic contacts study of P + N diodes on (111) and (100) diamond

Fontaine, Lya, Isoird, Karine, Tasselli, Josiane, Austin, Patrick, Cazarre, Alain, Boussadi, Amine, Achard, Jocelyn, Pinault-Thaury, Marie-Amandine

Année:

2019

Langue:

english

Fichier:

PDF, 741 KB

english, 2019